characteristic / test conditions drain-source breakdown voltage (v gs = 0v, i d = 250 a) on state drain current 2 (v ds > i d(on) x r ds(on) max, v gs = 10v) drain-source on-state resistance 2 (v gs = 10v, 11a) zero gate voltage drain current (v ds = 500v, v gs = 0v) zero gate voltage drain current (v ds = 400v, v gs = 0v, t c = 125c) gate-source leakage current (v gs = 30v, v ds = 0v) gate threshold voltage (v ds = v gs , i d = 1ma) 050-7131 rev d 10-2009 maximum ratings all ratings: t c = 25c unless otherwise speci ? ed. symbol v dss i d i dm v gs v gsm p d t j ,t stg t l i ar e ar e as parameter drain-source voltage continuous drain current @ t c = 25c pulsed drain current 1 gate-source voltage continuous gate-source voltage transient total power dissipation @ t c = 25c linear derating factor operating and storage junction temperature range lead temperature: 0.063" from case for 10 sec. avalanche current 1 (repetitive and non-repetitive) repetitive avalanche energy 1 single pulse avalanche energy 4 unit volts amps volts watts w/c c amps mj static electrical characteristics symbol bv dss i d(on) r ds(on) i dss i gss v gs(th) unit volts amps ohms a na volts min typ max 500 22 0.240 250 1000 100 3 5 apt5024bfll_sfll 500 22 88 30 40 265 2.12 -55 to 150 300 22 30 960 caution: these devices are sensitive to electrostatic discharge. proper handling procedures should be followed. bfll sfll apt5024bfll apt5024sfll 500v 22a 0.240 lower input capacitance increased power dissipation lower miller capacitance easier to drive lower gate charge, qg to-247 or surface mount d 3 pak package fast recovery body diode power mos 7 ? is a new generation of low loss, high voltage, n-channel enhancement mode power mosfets. both conduction and switch-ing losses are addressed with power mos 7 ? by signi ? cantly lowering r ds(on) and q g . power mos 7 ? combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with apt's patented metal gate structure. power mos 7 r fredfet microsemi website - http://www.microsemi.com t o -2 4 7 g c e d 3 pak g c e (s) (b) downloaded from: http:///
dynamic characteristics apt5024bfll_sfll 050-7131 rev d 10-2009 source-drain diode ratings and characteristics thermal characteristics characteristic / test conditions continuous source current (body diode) pulsed source current 1 (body diode) diode forward voltage 2 (v gs = 0v, i s = -i d 22a) peak diode recovery dv / dt 5 reverse recovery time (i s = -i d 22a, di / dt = 100a/ s) reverse recovery charge(i s = -i d 22a, di / dt = 100a/ s) peak recovery current(i s = -i d 22a, di / dt = 100a/ s) symbol i s i sm v sd dv / dt t rr q rr i rrm unit amps volts v/ns ns c amps min typ max 22 88 1.3 15 t j = 25c 250 t j = 125c 400 t j = 25c .500 t j = 125c 1.3 t j = 25c 7 t j = 125c 10 symbol r q jc r q ja min typ max 0.47 40 unit c/w characteristicjunction to case junction to ambient 1 repetitive rating: pulse width limited by maximum junction temperature 2 pulse test: pulse width < 380 s, duty cycle < 2% 3 see mil-std-750 method 3471 4 starting t j = +25c, l = 3.97mh, r g = 25 w , peak i l = 22a 5 dv / dt numbers re ? ect the limitations of the test circuit rather than the device itself. i s - i d 27a di / dt 700a/ s v r v dss t j 150 c 6 eon includes diode reverse recovery. see ? gures 18, 20. apt reserves the right to change, without notice, the speci ? cations and information contained herein. symbol c iss c oss c rss q g q gs q gd t d(on) t r t d(off) t f e on e off e on e off characteristicinput capacitance output capacitance reverse transfer capacitance total gate charge 3 gate-source charge gate-drain ("miller ") charge turn-on delay time rise time turn-off delay time fall time turn-on switching energy 6 turn-off switching energy turn-on switching energy 6 turn-off switching energy test conditions v gs = 0v v ds = 25v f = 1 mhz v gs = 10v v dd = 250v i d = 22a @ 25c resistive switching v gs = 15v v dd = 250v i d = 22a @ 25c r g = 0.6 w inductive switching @ 25c v dd = 333v, v gs = 15v i d = 22a, r g = 5 w inductive switching @ 125c v dd = 333v v gs = 15v i d = 22a, r g = 5 w min typ max 1900 417 27 43 12 24 8 6 18 2 167 86 262 99 unit pf nc ns j single pulse z jc , thermal impedance (c/w) 10 -5 10 -4 10 -3 10 -2 10 -1 1.0 rectangular pulse duration (seconds) figure 1, maximum effective transient thermal impedance, junction-to-case vs pulse duration 0.500.40 0.30 0.20 0.10 0 0.5 0.1 0.3 0.7 0.9 0.05 downloaded from: http:///
typical performance curves apt5024bfll_sfll r ds (on), drain-to-source on resistance i d , drain current (amperes) i d , drain current (amperes) (normalized) v gs (th), threshold voltage bv dss , drain-to-source breakdown r ds (on), drain-to-source on resistance i d , drain current (amperes) (normalized) voltage (normalized) 0 5 10 15 20 25 30 0 1 2 3 4 5 6 7 8 9 10 0 10 20 30 40 50 60 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 6050 40 30 20 10 0 2520 15 10 50 2.52.0 1.5 1.0 0.5 0.0 6050 40 30 20 10 0 1.71.6 1.5 1.4 1.3 1.2 1.1 1.0 0.9 1.151.10 1.05 1.00 0.95 0.90 0.85 1.21.1 1.0 0.9 0.8 0.7 0.6 v gs =10v v gs =20v t j = +125c t j = +25c t j = -55c v ds > i d (on) x r ds (on)max. 250 sec. pulse test @ <0.5 % duty cycle v gs =15 &10v 6v 5.5v 6.5v 7v 7.5v 8v v ds , drain-to-source voltage (volts) figure 2, transient thermal impedance model figure 3, low voltage output characteristics v gs , gate-to-source voltage (volts) i d , drain current (amperes) figure 4, transfer characteristics figure 5, r ds (on) vs drain current t c , case temperature (c) t j , junction temperature (c) figure 6, maximum drain current vs case temperature figure 7, breakdown voltage vs temperature t j , junction temperature (c) t c , case temperature (c) figure 8, on-resistance vs. temperature figure 9, threshold voltage vs temperature normalized to v gs = 10v @ 11a i d = 11a v gs = 10v 0.2050.264 0.00544f0.0981f power (watts) rc model junction temp. ( ?c) case temperature 050-7131 rev d 10-2009 downloaded from: http:///
apt5024bfll_sfll v ds , drain-to-source voltage (volts) v ds , drain-to-source voltage (volts) figure 10, maximum safe operating area figure 11, capacitance vs drain-to-source voltage q g , total gate charge (nc) v sd , source-to-drain voltage (volts) figure 12, gate charges vs gate-to-source voltage figure 13, source-drain diode forward voltage v gs , gate-to-source voltage (volts) i d , drain current (amperes) i dr , reverse drain current (amperes) c, capacitance (pf) 8910 1 1612 84 0 10,000 5,0001,000 100 10 200100 10 1 1 10 100 500 0 10 20 30 40 50 0 10 20 30 40 50 60 70 80 0.3 0.5 0.7 0.9 1.1 1.3 1.5 t j =+150c t j =+25c v ds =250v v ds =100v v ds =400v i d = 22a t c =+25c t j =+150c single pulse operation here limited by r ds (on) 10ms 1ms 100 s c rss c oss c iss i d (a) i d (a) figure 14, delay times vs current figure 15, rise and fall times vs current i d (a) r g , gate resistance (ohms) figure 16, switching energy vs current figure 17, switching energy vs. gate resistance v dd = 333v r g = 5 w t j = 125c l = 100 h t d(on) t d(off) e on e off e on e off t r t f switching energy ( m j) t d(on) and t d(off) (ns) switching energy ( m j) t r and t f (ns) v dd = 333v r g = 5 w t j = 125c l = 100 h e on includes diode reverse recovery. v dd = 333v r g = 5 w t j = 125c l = 100 h 0 10 20 30 40 0 10 20 30 40 0 10 20 30 40 0 5 10 15 20 25 30 35 40 45 50 v dd = 333v i d = 22a t j = 125c l = 100 h e on includes diode reverse recovery. 4030 20 10 0 500400 300 200 100 0 5040 30 20 10 0 500400 300 200 100 0 050-7131 rev d 10-2009 downloaded from: http:///
apt5024bfll_sfll 90% t d(off) t j = 125 c gate voltage drain voltage drain current 10% 0 90% t f switching energy figure 18, turn-on switching waveforms and de ? nitions figure 19, turn-off switching waveforms and de ? nitions drain current gate voltage drain voltage t j = 125 c 10 % t d(on) 90% 5 % t r 10 % 5 % switching energy i d d.u.t. v ds figure 20, inductive switching test circuit v dd g apt15df60 050-7131 rev d 10-2009 microsemis products are covered by one or more of u.s. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743, 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. us and foreign patents pending. all rights reserved. to - 247 package outline 15.49 (.610)16.26 (.640) 5.38 (.212)6.20 (.244) 6.15 (.242) bsc 4.50 (.177) max. 19.81 (.780)20.32 (.800) 20.80 (.819)21.46 (.845) 1.65 (.065)2.13 (.084) 1.01 (.040)1.40 (.055) 3.50 (.138)3.81 (.150) 2.87 (.113)3.12 (.123) 4.69 (.185)5.31 (.209) 1.49 (.059) 2.49 (.098) 2.21 (.087)2.59 (.102) 0.40 (.016)0.79 (.031) collector collector emitter gate 5.45 (.215) bsc dimensions in millimeters and (inches) 2-plcs. 15.95 (.628)16.05(.632) 1.22 (.048)1.32 (.052) 5.45 (.215) bsc{2 plcs.} 4.98 (.196)5.08 (.200) 1.47 (.058) 1.57 (.062) 2.67 (.105)2.84 (.112) 0.46 (.018) {3 plcs} 0.56 (.022) dimensions in millimeters (inches) heat sink (collector)and leads are plated 3.81 (.150)4.06 (.160) (base of lead) collector(heat sink) 1.98 (.078)2.08 (.082) gate collector emitter 0.020 (.001)0.178 (.007) 1.27 (.050)1.40 (.055) 11.51 (.453)11.61 (.457) 13.41 (.528)13.51(.532) revised8/29/97 1.04 (.041)1.15(.045) 13.79 (.543)13.99(.551) revised 4/18/95 d 3 pak package outline e1 sac: tin, silver, copper e3 sac: tin, silver, copper downloaded from: http:///
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